unisonic technologies co., ltd 3ln01m preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2008 unisonic technologies co., ltd qw-r502-285.a n channel silicon mosfet general-purpose switching device applications ? description the 3ln01m uses utc advanced technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device?s general purpose is for switching device applications. ? features * r ds(on) = 3.7 ? @v gs = 4 v * ultra low gate charge ( typical 1.58 nc ) * low reverse transfer capacitance ( c rss = typical 2.3 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 2.gate 1.sourc e 3.drai n lead-free: 3ln01ml halogen-free: 3ln01mg ? ordering information ordering number pin assignment normal lead free halogen-free package 1 2 3 packing 3ln01m-al3-r 3ln01ml-al3-r 3LN01MG-AL3-R sot-323 s g d tape reel ? marking
3ln01m preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-285.a ? absolute maximum ratings (t a = 25 c) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 10 v dc 0.15 drain current pulse(note 2) i d 0.6 a power dissipation p d 0.15 w storage temperature t stg -55 ~ +150 note: 1. 2. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width Q 10 s, duty cycle Q 1% ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =1ma 30 v drain-source leakage current i dss v ds =30v,v gs =0v 1 a gate-source leakage current i gss v gs =8v, v ds =0v 10 a on characteristics cutoff threshold voltage v gs(off) v ds =10v, i d =100a 0.4 1.3 v v gs =4v, i d =80ma 2.9 3.7 v gs =2.5v, i d =40ma 3.7 5.2 static drain-source on-resistance r ds(on) v gs =1.5v, i d =10ma 6.4 12.8 ? forward transconductance g fs v ds =10v, i d =80ma 0.15 0.22 s dynamic parameters input capacitance c iss 7.0 pf output capacitance c oss 5.9 pf reverse transfer capacitance c rss v ds =10v, v gs =0 v, f=1.0mhz 2.3 pf switching parameters total gate charge q g 1.58 nc gate source charge q gs 0.26 nc gate drain charge q gd v ds =10v, v gs =10v, i d =150m a 0.31 nc turn-on delay time t d(on) 19 ns turn-on rise time t r 65 ns turn-off delay time t d(off) 155 ns turn-off fall-time t f see specified test circuit 120 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =150ma, v gs =0v 0.87 1.2 v
3ln01m preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-285.a ? switching time test circuit utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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